onsemi TRANSISTORS - Transistors (BJT) - Single - 2N3013 2N3013

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1123687-2N3013 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 350MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 Status: Obsolete Manufacturer Homepage: www.centralsemi.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 200mA Voltage - Collector Emitter Breakdown (Maximum): 15V Current - Collector Cutoff (Maximum): 300nA Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Family Part Number: 2N3013 Manufacturer Pack Quantity: 250 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 30mA, 300mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 30mA, 400mV Maximum Power: 360mW
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1123687-2N3013 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 350MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 Status: Obsolete Manufacturer Homepage: www.centralsemi.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 200mA Voltage - Collector Emitter Breakdown (Maximum): 15V Current - Collector Cutoff (Maximum): 300nA Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Family Part Number: 2N3013 Manufacturer Pack Quantity: 250 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 30mA, 300mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 30mA, 400mV Maximum Power: 360mW
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Suppliers

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Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N3013 - 1123687-2N3013 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N3013
1123687-2N3013
TRANSISTORS - Transistors (BJT) - Single - 2N3013 1123687-2N3013
Manufacturer: ON Semiconductor Win Source Part Number: 1123687-2N3013 Packaging: Bulk Mounting Style: Through Hole Transistor Type: NPN Frequency - Transition: 350MHz Categories: Discrete Semiconductor Products Supplier Device Package: TO-18 Status: Obsolete Manufacturer Homepage: www.centralsemi.com Manufacturer Package: TO-206AA, TO-18-3 Metal Can Current - Collector (Ic) (Maximum): 200mA Voltage - Collector Emitter Breakdown (Maximum): 15V Current - Collector Cutoff (Maximum): 300nA Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Family Part Number: 2N3013 Manufacturer Pack Quantity: 250 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 500mV at 30mA, 300mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 30mA, 400mV Maximum Power: 360mW

Manufacturer: ON Semiconductor
Win Source Part Number: 1123687-2N3013
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 350MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-18
Status: Obsolete
Manufacturer Homepage: www.centralsemi.com
Manufacturer Package: TO-206AA, TO-18-3 Metal Can
Current - Collector (Ic) (Maximum): 200mA
Voltage - Collector Emitter Breakdown (Maximum): 15V
Current - Collector Cutoff (Maximum): 300nA
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Family Part Number: 2N3013
Manufacturer Pack Quantity: 250
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 500mV at 30mA, 300mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 30 at 30mA, 400mV
Maximum Power: 360mW

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1123687-2N3013
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N3013
Polarity NPN
Package Type SOT3
Packing Method Bulk; Bulk
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