onsemi IGBTs - Single - 11N120CND 11N120CND

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 052105-11N120CND Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 70ns IGBT Type: NPT Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 43A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 298W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 11A Total Switching Energy(Ets): 950μJ (on), 1.3mJ (off) Turn-on and Turn-off delay time: 23ns/180ns Testing Conditions: 960V, 11A, 10 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 052105-11N120CND Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 70ns IGBT Type: NPT Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 43A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 298W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 11A Total Switching Energy(Ets): 950μJ (on), 1.3mJ (off) Turn-on and Turn-off delay time: 23ns/180ns Testing Conditions: 960V, 11A, 10 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited
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Suppliers

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Supplier Links
IGBTs - Single - 11N120CND - 052105-11N120CND - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Single - 11N120CND
052105-11N120CND
IGBTs - Single - 11N120CND 052105-11N120CND
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 052105-11N120CND Packaging: Tube/Rail Mounting: Through Hole Reverse Recovery Time (trr): 70ns IGBT Type: NPT Input Type: Standard Gate Charge: 100nC Categories: Discrete Semiconductor Products Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-247 Maximum Current Collector: 43A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Maximum Power Dissipation: 298W Pulsed Collector Current: 80A Collector-emitter saturation voltage(Max): 2.4V @ 15V, 11A Total Switching Energy(Ets): 950μJ (on), 1.3mJ (off) Turn-on and Turn-off delay time: 23ns/180ns Testing Conditions: 960V, 11A, 10 Ohm, 15V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 052105-11N120CND
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 70ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 100nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 43A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 298W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.4V @ 15V, 11A
Total Switching Energy(Ets): 950μJ (on), 1.3mJ (off)
Turn-on and Turn-off delay time: 23ns/180ns
Testing Conditions: 960V, 11A, 10 Ohm, 15V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number 052105-11N120CND
Product Name IGBTs - Single - 11N120CND
VCE(on) 2.4 volts
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