onsemi 1200V 35A 298W IGBT Transistor 10N120BND

IGBT 1200V 35A 298W TO247 Product overview: 10N120BND from ON Semiconductor is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 35A, 298W. Search-friendly keywords include IGBT Transistor, Single IGBTs, electronic component, datasheet, replacement part, 1200V, 35A, 298W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 279-10N120BND can be used for catalog matching and distributor lookup.

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 197246-10N120BND
Packaging: Tube/Rail
Mounting: Through Hole
Reverse Recovery Time (trr): 70ns
IGBT Type: NPT
Input Type: Standard
Gate Charge: 100nC
Categories: Discrete Semiconductor Products
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-247
Maximum Current Collector: 35A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Maximum Power Dissipation: 298W
Pulsed Collector Current: 80A
Collector-emitter saturation voltage(Max): 2.7V @ 15V, 10A
Total Switching Energy(Ets): 850μJ (on), 800μJ (off)
Turn-on and Turn-off delay time: 23ns/165ns
Testing Conditions: 960V, 10A, 10 Ohm, 15V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited