OmniVision Technologies, Inc. Transistors WNMD2167-6/TR

Description
20V 5.7A 21mΩ@4.5V,6.3A 900mW 1V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS
  • Transistors - WNMD2167-6/TR - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
20V 5.7A 21mΩ@4.5V,6.3A 900mW 1V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - WNMD2167-6/TR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
WNMD2167-6/TR
Transistors WNMD2167-6/TR
20V 5.7A 21mΩ@4.5V,6.3A 900mW 1V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS

20V 5.7A 21mΩ@4.5V,6.3A 900mW 1V@250uA 2 N-Channel SOT-23-6 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number WNMD2167-6/TR
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

CSD17303Q5 30V N Channel NexFET? Power MOSFET - CSD17303Q5 - Texas Instruments
Texas Instruments
CSD17303Q5 30V N Channel NexFET? Power MOSFET
CSD17303Q5
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
8 suppliers
GaAs Fet Switches - KS202 - Micross Components, Inc.
Micross Components, Inc.
GaAs Fet Switches
KS202
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor - QPD0060 - Qorvo
Qorvo
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
QPD0060
Specs
Transistor Technology / Material DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Package Type DFN
View Details