OmniVision Technologies, Inc. Semiconductor Power Modules ESD5311N-2/TR

Description
4A@8/20us 21V 7.5V 5V X1-DFN1006-2 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - ESD5311N-2/TR - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
4A@8/20us 21V 7.5V 5V X1-DFN1006-2 ESD and Surge Protection (TVS/ESD) ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - ESD5311N-2/TR - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
ESD5311N-2/TR
Semiconductor Power Modules ESD5311N-2/TR
4A@8/20us 21V 7.5V 5V X1-DFN1006-2 ESD and Surge Protection (TVS/ESD) ROHS

4A@8/20us 21V 7.5V 5V X1-DFN1006-2 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number ESD5311N-2/TR
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

Intelligent Power Modules (IPM) - IM818-SCC - Infineon Technologies AG
Infineon Technologies AG
Intelligent Power Modules (IPM)
IM818-SCC
Specs
Technology Intelligent Power Module (IPM)
Configuration Three Phase; 3 Phase Open Emitter
Package DIP 36x23D
View Details
IGBT Modules IPM - 6th-Gen V Series Model 7MBP75VDA120-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules IPM
6th-Gen V Series Model 7MBP75VDA120-50
Specs
Technology IGBT; Intelligent Power Module (IPM)
Package P630
Output Voltage 1200 volts
View Details
MOSFET Modules - - Semikron, Inc.
Semikron, Inc.
MOSFET Modules
Specs
Technology MOSFET
Configuration Half-Bridge; H-Bridge
Output Voltage 100 to 200 volts
View Details
fast PACK E1 SiC Power Module - 10-EZ124RA030RO-LS08J88T - Vincotech GmbH
Vincotech GmbH
fast PACK E1 SiC Power Module
10-EZ124RA030RO-LS08J88T
Specs
Technology Rectifier; SiC diode
Output Voltage 1200 volts
Output Current 30 amps
View Details