NTE Electronics, Inc. Transistor Polarity Nte Electronics NTE93

Description
Transistor Polarity:PNP; Collector Emitter Voltage Max:200V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz; DC Current Gain hFE Min:30hFE RoHS Compliant: Yes
Description
Transistor Polarity:PNP; Collector Emitter Voltage Max:200V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz; DC Current Gain hFE Min:30hFE RoHS Compliant: Yes
Datasheet
Datasheet Summary
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NTE93 is a silicon PNP transistor designed for high-fidelity audio power amplifier applications. It is mounted in a through-hole package with three pins, with the collector connected to a tab. The device has a collector-emitter voltage rating of 200 V, a continuous collector current of 15 A, and a collector power dissipation of 150 W at 25°C. The junction temperature range is from -55°C to +150°C. The DC current gain (hFE) ranges from 30 to 120 at a collector current of 5 A and collector-emitter voltage of 4 V. The collector-emitter saturation voltage is 3 V at a collector current of 10 A and base current of 1 A. The transition frequency is 20 MHz at a collector-emitter voltage of 12 V and emitter current of 0.5 A. The part is RoHS compliant.

Datasheet Summary
Powered by GS/AI

NTE93 is a silicon PNP transistor designed for high-fidelity audio power amplifier applications. It is mounted in a through-hole package with three pins, with the collector connected to a tab. The device has a collector-emitter voltage rating of 200 V, a continuous collector current of 15 A, and a collector power dissipation of 150 W at 25°C. The junction temperature range is from -55°C to +150°C. The DC current gain (hFE) ranges from 30 to 120 at a collector current of 5 A and collector-emitter voltage of 4 V. The collector-emitter saturation voltage is 3 V at a collector current of 10 A and base current of 1 A. The transition frequency is 20 MHz at a collector-emitter voltage of 12 V and emitter current of 0.5 A. The part is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
Transistor Polarity Nte Electronics - 05H6110 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Nte Electronics
05H6110
Transistor Polarity Nte Electronics 05H6110
Transistor Polarity:PNP; Collector Emitter Voltage Max:200V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz; DC Current Gain hFE Min:30hFE RoHS Compliant: Yes

Transistor Polarity:PNP; Collector Emitter Voltage Max:200V; Continuous Collector Current:15A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz; DC Current Gain hFE Min:30hFE RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 05H6110
Product Name Transistor Polarity Nte Electronics
Transistor Type Transistor Polarity Nte Electronics
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