IGBT TRANSISTOR, COLLECTOR EMITTER VOLTAGE: 1.2 KV, COLLECTOR CURRENT: 25 A, POWER DISSIPATION: 200 W, CASE: TO3P, GATE EMITTER VOLTAGE: 20 V, PULSE COLLECTOR CURRENT: 50 A, THT MOUNT, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
IGBT-1200V 25AMP
N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor
| Radwell International | Acme Chip Technology Co., Limited | Allied Electronics, Inc. | |
|---|---|---|---|
| Product Category | RF Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 38824425 | NTE3323 | 70214699 |
| Product Name | Transistor | Discrete Semiconductor Products - Transistors - IGBTs | IGBT N-CHANNEL ENHANCEMENT 1200V IC=25AMP TO-3P CASE HIGH SPEED SWITCH |
| Packing Method | Bag |