NTE Electronics, Inc. IGBT N-CHANNEL ENHANCEMENT 1200V IC=25AMP TO-3P CASE HIGH SPEED SWITCH NTE3323

Description
N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor High input impedance High speed Low saturation voltage High power switching and motor control applications
  • Transistor - 38824425 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - IGBTs - NTE3323 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Description
N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor High input impedance High speed Low saturation voltage High power switching and motor control applications

Suppliers

Company
Product
Description
Supplier Links
Allied Electronics, Inc.
Fort Worth, TX, USA
IGBT N-CHANNEL ENHANCEMENT 1200V IC=25AMP TO-3P CASE HIGH SPEED SWITCH
70214699
IGBT N-CHANNEL ENHANCEMENT 1200V IC=25AMP TO-3P CASE HIGH SPEED SWITCH 70214699
N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor High input impedance High speed Low saturation voltage High power switching and motor control applications

N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor

  • High input impedance
  • High speed
  • Low saturation voltage
    High power switching and motor control applications
Supplier's Site
Transistor - 38824425 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
38824425
Transistor 38824425
IGBT TRANSISTOR, COLLECTOR EMITTER VOLTAGE: 1.2 KV, COLLECTOR CURRENT: 25 A, POWER DISSIPATION: 200 W, CASE: TO3P, GATE EMITTER VOLTAGE: 20 V, PULSE COLLECTOR CURRENT: 50 A, THT MOUNT, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

IGBT TRANSISTOR, COLLECTOR EMITTER VOLTAGE: 1.2 KV, COLLECTOR CURRENT: 25 A, POWER DISSIPATION: 200 W, CASE: TO3P, GATE EMITTER VOLTAGE: 20 V, PULSE COLLECTOR CURRENT: 50 A, THT MOUNT, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - NTE3323 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - IGBTs
NTE3323
Discrete Semiconductor Products - Transistors - IGBTs NTE3323
IGBT-1200V 25AMP

IGBT-1200V 25AMP

Supplier's Site

Technical Specifications

  Allied Electronics, Inc. Radwell International Acme Chip Technology Co., Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number 70214699 38824425 NTE3323
Product Name IGBT N-CHANNEL ENHANCEMENT 1200V IC=25AMP TO-3P CASE HIGH SPEED SWITCH Transistor Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
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