NTE Electronics, Inc. IGBT N-CHANNEL ENHANCEMENT 900V IC=60A TO-3P CASE HIGH SPEED SWITCH NTE3322

Description
N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor High input impedance High speed Low saturation voltage High power switching and motor control applications
  • Single Igbt, 900V, 60A; Continuous Collector Current Nte Electronics - 31C3940 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - IGBTs - NTE3322 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Description
N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor High input impedance High speed Low saturation voltage High power switching and motor control applications

Suppliers

Company
Product
Description
Supplier Links
Allied Electronics, Inc.
Fort Worth, TX, USA
IGBT N-CHANNEL ENHANCEMENT 900V IC=60A TO-3P CASE HIGH SPEED SWITCH
70214698
IGBT N-CHANNEL ENHANCEMENT 900V IC=60A TO-3P CASE HIGH SPEED SWITCH 70214698
N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor High input impedance High speed Low saturation voltage High power switching and motor control applications

N-Channel Transistor Type, 200 W Power Dissipation, Insulated Gate Bipolar Transistor

  • High input impedance
  • High speed
  • Low saturation voltage
    High power switching and motor control applications
Supplier's Site
Single Igbt, 900V, 60A; Continuous Collector Current Nte Electronics - 31C3940 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Single Igbt, 900V, 60A; Continuous Collector Current Nte Electronics
31C3940
Single Igbt, 900V, 60A; Continuous Collector Current Nte Electronics 31C3940
SINGLE IGBT, 900V, 60A; Continuous Collector Current:60A; Power Dissipation:200W; Collector Emitter Voltage Max:900V; No. of Pins:3Pins; Operating Temperature Max:-; Product Range:-; MSL:- RoHS Compliant: Yes

SINGLE IGBT, 900V, 60A; Continuous Collector Current:60A; Power Dissipation:200W; Collector Emitter Voltage Max:900V; No. of Pins:3Pins; Operating Temperature Max:-; Product Range:-; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - IGBTs - NTE3322 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - IGBTs
NTE3322
Discrete Semiconductor Products - Transistors - IGBTs NTE3322
IGBT-900V 60AMP

IGBT-900V 60AMP

Supplier's Site

Technical Specifications

  Allied Electronics, Inc. Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 70214698 31C3940 NTE3322
Product Name IGBT N-CHANNEL ENHANCEMENT 900V IC=60A TO-3P CASE HIGH SPEED SWITCH Single Igbt, 900V, 60A; Continuous Collector Current Nte Electronics Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
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