NTE Electronics, Inc. Discrete Semiconductor Products - Transistors - JFETs NTE312

JFET N-CH 30V TO92

N CHANNEL JFET, -30V, TO-92; BREAKDOWN VOLTAGE VBR:-30V; ZERO GATE VOLTAGE DRAIN CURRENT IDSS MIN:5MA; ZERO GATE VOLTAGE DRAIN CURRENT IDSS MAX:15MA; GATE-SOURCE CUTOFF VOLTAGE VGS(OFF) MAX:-6V; TRANSISTOR TYPE:JFET; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

NTE Semiconductors NTE312

N-Channel Silicon Junction Field Effect Transistor (JFET)

• High power gain is 10 dB (M") @ 400MHz
• High transconductance is 4000 μmho (M") @ 400MHz
• Drain and gate leads separated for high maximum stable gain
• For use in VHF amplifiers in fm, tv, and mobile communications equipment
  This is a field effect transistor designed for VHF amplifier and mixer applications. It comes in a TO-92 package.