NTE Electronics, Inc. INTEGRATED CIRCUIT EPROM 32K NMOS 200NS24-LEAD DIP UV ERASABLE NTE2732A

Description
The NTE2732A is a 32,768-bits ultraviolet erasable and electrically programmable read-only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N-Channel Si-Gate MOS processing. With its single +5 V power supply and with an access time of 200 ns, the NTE2732A is ideal for use with high performance +5 V microprocessors such as the NTE3880. The NTE2732A has an important feature which is the separate output control, Output Enable (OE) from the Chip Enable control (CE). The OE control eliminates bus contention in multiple bus microprocessor systems. The NTE2732A also features an standby mode which reduces the power dissipation without increasing access time. The active current is 125 mA while the maximum standby mode is achieved by applying a TTL-high signal to the CE input. Features: Fast Access Time: 200 ns Max 0°C to +70°C Standard Temperature Range Single +5 V Power Supply Low Standby Current (35 mA Max.) Inputs and Outputs TTL Compatible During Read and Program Completely Static
Description
The NTE2732A is a 32,768-bits ultraviolet erasable and electrically programmable read-only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N-Channel Si-Gate MOS processing. With its single +5 V power supply and with an access time of 200 ns, the NTE2732A is ideal for use with high performance +5 V microprocessors such as the NTE3880. The NTE2732A has an important feature which is the separate output control, Output Enable (OE) from the Chip Enable control (CE). The OE control eliminates bus contention in multiple bus microprocessor systems. The NTE2732A also features an standby mode which reduces the power dissipation without increasing access time. The active current is 125 mA while the maximum standby mode is achieved by applying a TTL-high signal to the CE input. Features: Fast Access Time: 200 ns Max 0°C to +70°C Standard Temperature Range Single +5 V Power Supply Low Standby Current (35 mA Max.) Inputs and Outputs TTL Compatible During Read and Program Completely Static

Suppliers

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Product
Description
Supplier Links
INTEGRATED CIRCUIT EPROM 32K NMOS 200NS24-LEAD DIP UV ERASABLE - 70216016 - Allied Electronics, Inc.
Fort Worth, TX, USA
INTEGRATED CIRCUIT EPROM 32K NMOS 200NS24-LEAD DIP UV ERASABLE
70216016
INTEGRATED CIRCUIT EPROM 32K NMOS 200NS24-LEAD DIP UV ERASABLE 70216016
The NTE2732A is a 32,768-bits ultraviolet erasable and electrically programmable read-only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N-Channel Si-Gate MOS processing. With its single +5 V power supply and with an access time of 200 ns, the NTE2732A is ideal for use with high performance +5 V microprocessors such as the NTE3880. The NTE2732A has an important feature which is the separate output control, Output Enable (OE) from the Chip Enable control (CE). The OE control eliminates bus contention in multiple bus microprocessor systems. The NTE2732A also features an standby mode which reduces the power dissipation without increasing access time. The active current is 125 mA while the maximum standby mode is achieved by applying a TTL-high signal to the CE input. Features: Fast Access Time: 200 ns Max 0°C to +70°C Standard Temperature Range Single +5 V Power Supply Low Standby Current (35 mA Max.) Inputs and Outputs TTL Compatible During Read and Program Completely Static

The NTE2732A is a 32,768-bits ultraviolet erasable and electrically programmable read-only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N-Channel Si-Gate MOS processing. With its single +5 V power supply and with an access time of 200 ns, the NTE2732A is ideal for use with high performance +5 V microprocessors such as the NTE3880. The NTE2732A has an important feature which is the separate output control, Output Enable (OE) from the Chip Enable control (CE). The OE control eliminates bus contention in multiple bus microprocessor systems. The NTE2732A also features an standby mode which reduces the power dissipation without increasing access time. The active current is 125 mA while the maximum standby mode is achieved by applying a TTL-high signal to the CE input.
Features:

  • Fast Access Time: 200 ns Max
  • 0°C to +70°C Standard Temperature Range
  • Single +5 V Power Supply
  • Low Standby Current (35 mA Max.)
  • Inputs and Outputs TTL Compatible During Read and Program
  • Completely Static
Supplier's Site

Technical Specifications

  Allied Electronics, Inc.
Product Category Memory Chips
Product Number 70216016
Product Name INTEGRATED CIRCUIT EPROM 32K NMOS 200NS24-LEAD DIP UV ERASABLE
Memory Category EPROM
Access Time 200 ns
Operating Temperature 0 to ? C (32 to ? F)
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