NTE Electronics, Inc. POWER MOSFET N-CHANNEL 200V ID=30A TO-247 CASE HIGH SPEED SWITCH ENHANCEMENT MOD NTE2376

Description
N-Channel Enhancement Mode MOSFET, 30 A, 190 W, -55 to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Isolated central Mounting hole Fast switching Ease of paralleling Simple drive requirements
Description
N-Channel Enhancement Mode MOSFET, 30 A, 190 W, -55 to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Isolated central Mounting hole Fast switching Ease of paralleling Simple drive requirements

Suppliers

Company
Product
Description
Supplier Links
POWER MOSFET N-CHANNEL 200V ID=30A TO-247 CASE HIGH SPEED SWITCH ENHANCEMENT MOD - 70214636 - Allied Electronics, Inc.
Fort Worth, TX, USA
POWER MOSFET N-CHANNEL 200V ID=30A TO-247 CASE HIGH SPEED SWITCH ENHANCEMENT MOD
70214636
POWER MOSFET N-CHANNEL 200V ID=30A TO-247 CASE HIGH SPEED SWITCH ENHANCEMENT MOD 70214636
N-Channel Enhancement Mode MOSFET, 30 A, 190 W, -55 to +150°C, M3 Screw Mounting Dynamic dv⁄dt rating Repetitive avalanche rated Isolated central Mounting hole Fast switching Ease of paralleling Simple drive requirements

N-Channel Enhancement Mode MOSFET, 30 A, 190 W, -55 to +150°C, M3 Screw Mounting

  • Dynamic dv⁄dt rating
  • Repetitive avalanche rated
  • Isolated central Mounting hole
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NTE2376 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NTE2376
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NTE2376
MOSFET N-CHANNEL 200V 30A TO247

MOSFET N-CHANNEL 200V 30A TO247

Supplier's Site

Technical Specifications

  Allied Electronics, Inc. Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 70214636 NTE2376
Product Name POWER MOSFET N-CHANNEL 200V ID=30A TO-247 CASE HIGH SPEED SWITCH ENHANCEMENT MOD Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 200 volts
Transconductance 0.0120 kS
rDS(on) 0.0850 ohms
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