NTE Electronics, Inc. Transistor Polarity Nte Electronics NTE2337

Description
Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:7A; Power Dissipation:45W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz; DC Current Gain hFE Min:15hFE RoHS Compliant: Yes
Description
Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:7A; Power Dissipation:45W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz; DC Current Gain hFE Min:15hFE RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The NTE2337 is a silicon NPN transistor designed for high-speed switching applications. It is packaged in a three-pin through-hole case with dimensions of 17.0 mm in length, 7.5 mm in width, and 13.5 mm in minimum height, featuring an isolated tab. The device has a collector-emitter voltage rating of 500 V, a continuous collector current of 7 A, and a maximum power dissipation of 45 W at 25°C. The DC current gain (hFE) ranges from 15 to 8 under specified conditions, with a transition frequency of 20 MHz. Turn-on time is 1.0 µs, storage time is 3.0 µs, and collector current fall time is 0.3 µs. It operates with a junction temperature up to 150°C and a storage temperature range of -55°C to +150°C. The part complies with RoHS standards.

Datasheet Summary
Powered by GS/AI

The NTE2337 is a silicon NPN transistor designed for high-speed switching applications. It is packaged in a three-pin through-hole case with dimensions of 17.0 mm in length, 7.5 mm in width, and 13.5 mm in minimum height, featuring an isolated tab. The device has a collector-emitter voltage rating of 500 V, a continuous collector current of 7 A, and a maximum power dissipation of 45 W at 25°C. The DC current gain (hFE) ranges from 15 to 8 under specified conditions, with a transition frequency of 20 MHz. Turn-on time is 1.0 µs, storage time is 3.0 µs, and collector current fall time is 0.3 µs. It operates with a junction temperature up to 150°C and a storage temperature range of -55°C to +150°C. The part complies with RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Transistor Polarity Nte Electronics - 05H5624 - Newark, An Avnet Company
Chicago, IL, United States
Transistor Polarity Nte Electronics
05H5624
Transistor Polarity Nte Electronics 05H5624
Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:7A; Power Dissipation:45W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz; DC Current Gain hFE Min:15hFE RoHS Compliant: Yes

Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:7A; Power Dissipation:45W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:20MHz; DC Current Gain hFE Min:15hFE RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Transistors
Product Number 05H5624
Product Name Transistor Polarity Nte Electronics
Transistor Type Transistor Polarity Nte Electronics
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