The 2N5685 is an NPN silicon power transistor in a TO-3 package designed for high-current switching and amplifier applications. It has a continuous collector current rating of 50 A and a collector-emitter voltage rating of 60 V. The device exhibits a DC current gain (hFE) of 15 to 60 at 25 A collector current and a maximum collector-emitter saturation voltage of 1 V at 25 A. Total power dissipation is 300 W at 25°C, with a derating of 1.715 W/°C. Thermal resistance from junction to case is 0.584°C/W. Operating and storage junction temperatures range from -65°C to +200°C. The transistor meets the thermal and electrical specifications for high-power industrial applications.
TRANS NPN 60V 50A TO3 Product overview: 2N5685 from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 50A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 50A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5685 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N5685 |
| Product Name | 60V 50A Bipolar Transistor |
| Package Type | Bag |
