The 2N5192 is a silicon NPN bipolar transistor in a TO-126 plastic package designed for power amplifier and switching applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 4 A, and a total power dissipation of 40 W at 25°C, derating at 320 mW/°C. The junction temperature range is −65°C to +150°C, with a thermal resistance from junction to case of 3.12°C/W. The DC current gain ranges from 7 to 80 at collector currents of 4 A and 1.5 A respectively, with a collector-emitter saturation voltage of up to 1.4 V at I_C = 4 A and I_B = 1 A. The current gain-bandwidth product is 2.0 MHz. The device meets the thermal and electrical specifications for the TO-126 package dimensions.
TRANS NPN 80V 4A TO126 Product overview: 2N5192 from NTE Electronics, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5192 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N5192 |
| Product Name | 80V 4A Bipolar Transistor |
| Package Type | Bag |
