Nexperia B.V. 50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open PUMD6,125

Description
NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7 PNP/PNP complement: PUMB3 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Digital application in industrial segments Switching loads Low current peripheral driver Controlling IC inputs Cost-saving alternative to BC847 / BC857 series in digital applications
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Description
NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7 PNP/PNP complement: PUMB3 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Digital application in industrial segments Switching loads Low current peripheral driver Controlling IC inputs Cost-saving alternative to BC847 / BC857 series in digital applications
Request a Quote
Datasheet
Datasheet Summary
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50 V, 100 mA NPN/PNP Resistor-Equipped Transistor with built-in bias resistor R1 = 4.7 kΩ and R2 open, in a SOT363 (TSSOP6) surface-mounted package measuring 2.1 mm x 1.25 mm x 0.95 mm. The device has a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 300 mW per device. It meets IEC 60134 for limiting values and is not automotive qualified.

Datasheet Summary
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50 V, 100 mA NPN/PNP Resistor-Equipped Transistor with built-in bias resistor R1 = 4.7 kΩ and R2 open, in a SOT363 (TSSOP6) surface-mounted package measuring 2.1 mm x 1.25 mm x 0.95 mm. The device has a maximum collector-emitter voltage of 50 V, collector current of 100 mA, and total power dissipation of 300 mW per device. It meets IEC 60134 for limiting values and is not automotive qualified.

Suppliers

Company
Product
Description
Supplier Links
50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open - PUMD6,125 - Nexperia B.V.
Nijmegen, Netherlands
50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open
PUMD6,125
50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open PUMD6,125
NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PUMH7 PNP/PNP complement: PUMB3 Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications Digital application in industrial segments Switching loads Low current peripheral driver Controlling IC inputs Cost-saving alternative to BC847 / BC857 series in digital applications

NPN/PNP Resistor-Equipped Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PUMH7

PNP/PNP complement: PUMB3

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications

  • Digital application in industrial segments
  • Switching loads
  • Low current peripheral driver
  • Controlling IC inputs
  • Cost-saving alternative to BC847 / BC857 series in digital applications
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD6,125CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD6,125CT-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD6,125CT-ND
TRANS PREBIAS 1NPN 1PNP 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD6,125DKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD6,125DKR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD6,125DKR-ND
TRANS PREBIAS 1NPN 1PNP 6-TSSOP

TRANS PREBIAS 1NPN 1PNP 6-TSSOP

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-PUMD6,125TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-PUMD6,125TR-ND
Bipolar Transistor Arrays, Pre-Biased 1727-PUMD6,125TR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PUMD6,125 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PUMD6,125
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PUMD6,125
TRANS PREBIAS 1NPN 1PNP 6TSSOP

TRANS PREBIAS 1NPN 1PNP 6TSSOP

Supplier's Site
Rf Transistor Rohs Compliant Nexperia - 29AK4239 - Newark, An Avnet Company
Chicago, IL, United States
Rf Transistor Rohs Compliant Nexperia
29AK4239
Rf Transistor Rohs Compliant Nexperia 29AK4239
RF TRANSISTOR ROHS COMPLIANT: YES

RF TRANSISTOR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors RF Transistors
Product Number PUMD6,125 1727-PUMD6,125CT-ND PUMD6,125 29AK4239
Product Name 50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Rf Transistor Rohs Compliant Nexperia
Package Type SOT363-3 SOT363-3 6-TSSOP, SC-88, SOT-363 AEC-Q100 TO-3
Transistor Grade / Operating Range Industrial Automotive
Polarity NPN; PNP
Packing Method Tape Reel; Tape & Reel (TR)
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