NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package, with a 50 V collector-emitter voltage rating and 100 mA output current capability per transistor. Built-in bias resistors R1 and R2 are both 22 kΩ, simplifying circuit design and reducing component count. The device operates with a maximum total power dissipation of 300 mW at 25 °C ambient temperature and supports junction temperatures up to 150 °C.
NPN/PNP Resistor-Equipped double Transistor (RET) in a very small SOT363-3 (SC-88) Surface-Mounted Device (SMD) plastic package.
NPN/NPN complement: PUMH1
PNP/PNP complement: PUMB1
Features and benefits
Applications
TRANS PREBIAS 1NPN 1PNP 6-TSSOP
TRANS PREBIAS 1NPN 1PNP 6-TSSOP
TRANS PREBIAS 1NPN 1PNP 6-TSSOP
PUMD2/SOT363/SC-88
| Nexperia B.V. | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | PUMD2F | 1727-PUMD2FTR-ND | PUMD2F |
| Product Name | 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Package Type | SOT363-3 SOT363-3 | 6-TSSOP, SC-88, SOT-363 | 6-TSSOP |
