Nexperia B.V. 60 V, dual N-channel Trench MOSFET BSS138AKRA-QZ

Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package measuring 1.4 mm x 1.2 mm x 0.47 mm. Each transistor supports a drain-source voltage of 60 V, a gate-source voltage of ±20 V, and a continuous drain current of 320 mA at 25 °C with a gate-source voltage of 10 V. The drain-source on-state resistance is 2.2 Ω to 2.9 Ω at 100 mA and 25 °C. The device is AEC-Q101 qualified and provides ESD protection with a human body model rating of 500 V. Applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.