Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and benefits
Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure of merit (Qc x VF)
High IFSM capability
High power density
Reduced system cost
System miniaturization
Reduced EMI
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Traction inverter
DC-DC converter
Onboard charger
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and benefits
- Zero forward and reverse recovery
- Temperature independent fast and smooth switching performance
- Outstanding figure of merit (Qc x VF)
- High IFSM capability
- High power density
- Reduced system cost
- System miniaturization
- Reduced EMI
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
- Traction inverter
- DC-DC converter
- Onboard charger
