Extremely low clamping, extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless, ultra-small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients.
Features and benefits
Bidirectional ESD protection of one line
ESD protection up to ±14 kV contact discharge according to IEC 61000-4-2
Backwards compatible to USB3.2 due to VRWM = 2.8 V
Extremely low diode capacitance: Cd = 0.16 pF at 1 MHz
Extremely low clamping and trigger voltage (Vt1 = 6.9 V TLP) to protect sensitive transceivers
Extremely low insertion loss: -0.29 dB at 10 GHz
Extremely low return loss: -20.6 dB at 10 GHz
RF performance does not degrade over the operation voltage range
Extremely low leakage current: < 1 nA at 2.8 V
Extremely low inductance protection path to ground
Very high surge robustness: 5.5 A for a 8/20 µs pulse
IEC 61000-4-4 robust up to level 3 on I/O ports (corresponds to 40 A into a 50 Ohm termination)
Ultra-small SMD package
Applications
Cellular handsets and accessories
Portable electronics
Communication systems
Computers and peripherals
USB4, USB3.2 and Thunderbolt 3 and 4 data lines
Extremely low clamping, extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode, part of the TrEOS protection family. This device is housed in a DSN0603-2 (SOD962-2) leadless, ultra-small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients.
Features and benefits
- Bidirectional ESD protection of one line
- ESD protection up to ±14 kV contact discharge according to IEC 61000-4-2
- Backwards compatible to USB3.2 due to VRWM = 2.8 V
- Extremely low diode capacitance: Cd = 0.16 pF at 1 MHz
- Extremely low clamping and trigger voltage (Vt1 = 6.9 V TLP) to protect sensitive transceivers
- Extremely low insertion loss: -0.29 dB at 10 GHz
- Extremely low return loss: -20.6 dB at 10 GHz
- RF performance does not degrade over the operation voltage range
- Extremely low leakage current: < 1 nA at 2.8 V
- Extremely low inductance protection path to ground
- Very high surge robustness: 5.5 A for a 8/20 µs pulse
- IEC 61000-4-4 robust up to level 3 on I/O ports (corresponds to 40 A into a 50 Ohm termination)
- Ultra-small SMD package
Applications
- Cellular handsets and accessories
- Portable electronics
- Communication systems
- Computers and peripherals
- USB4, USB3.2 and Thunderbolt 3 and 4 data lines
