NPN Resistor-Equipped Transistor (RET) in a DFN1006-3 (SOT883) surface-mounted package measuring 1 mm × 0.6 mm × 0.48 mm, with a built-in 4.7 kΩ input bias resistor and no R2 resistor. It has a collector-emitter voltage rating of 50 V, a maximum output current of 100 mA, and a total power dissipation of 250 mW. The device offers a DC current gain (hFE) of at least 200 at 1 mA collector current and a collector-emitter saturation voltage of up to 100 mV. It is qualified to AEC-Q101 for automotive applications and requires reflow soldering only. Thermal resistance from junction to ambient is 500 K/W when mounted on a standard FR4 PCB.
NPN Resistor-Equipped Transistor (RET) in a very small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA143TM-Q
Features and benefits
Applications
PDTC143TM-Q/SOT883/X
PDTC143TM-Q/SOT883/X
PDTC143TM-Q/SOT883/X
| Nexperia B.V. | DigiKey | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | PDTC143TM-QYL | 1727-PDTC143TM-QYLTR-ND |
| Product Name | 50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open | Single, Pre-Biased Bipolar Transistors |
| Package Type | SOT883 SOT883 | SC-101, SOT-883 |
