30 V, 2 A NPN/NPN low VCEsat transistor in a leadless DFN2020-6 (SOT1118) surface-mount package measuring 2 mm × 2 mm × 0.65 mm. It has a peak collector current of 3 A, a collector-emitter saturation voltage of up to 300 mV at 2 A, and a saturation resistance of 145 mΩ. The device operates with a junction temperature up to 150 °C and is qualified to AEC-Q101 for automotive applications.
NPN/NPN low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
PNP/PNP complement: PBSS5230PAP-Q
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | PBSS4230PAN-QX |
| Product Name | 30 V, 2 A NPN/NPN low VCEsat transistor |
| Package Type | SOT1118 SOT1118 |
