Nexperia B.V. 30 V, 1 A NPN low VCEsat transistor PBSS4130QAZ

Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
  • 30 V, 1 A NPN low VCEsat transistor - PBSS4130QAZ - Nexperia B.V.
    Nexperia B.V.
  • TRANSISTORS - Transistors (BJT) - Single - PBSS4130QAZ - 930029-PBSS4130QAZ - Win Source Electronics
    Win Source Electronics
  • Single Bipolar Transistors - 1727-1461-2-ND - DigiKey
    DigiKey
  • Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 1 A, 180 Rohs Compliant Nexperia - 68Y7772 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
30 V, 1 A NPN low VCEsat transistor - PBSS4130QAZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
30 V, 1 A NPN low VCEsat transistor
PBSS4130QAZ
30 V, 1 A NPN low VCEsat transistor PBSS4130QAZ
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5130QA. Features and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirements Solderable side pads AEC-Q101 qualified Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBSS5130QA.

Features and benefits

  • Very low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High energy efficiency due to less heat generation
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Solderable side pads
  • AEC-Q101 qualified

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - PBSS4130QAZ - 930029-PBSS4130QAZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - PBSS4130QAZ
930029-PBSS4130QAZ
TRANSISTORS - Transistors (BJT) - Single - PBSS4130QAZ 930029-PBSS4130QAZ
Manufacturer: Nexperia USA Inc. Win Source Part Number: 930029-PBSS4130QAZ Operating Temperature Range: 150°C (TJ) Features: Bipolar (BJT) Transistor NPN 30 V 1 A 190MHz 325 mW Surface Mount DFN1010D-3 Package: 3-XDFN Exposed Pad Package: Reel - TR Mounting: Surface Mount Family Name: PBSS4130 Categories: Discrete Semiconductor Products Case / Package: DFN1010D-3 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 5000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 19 Weeks REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Other Part Number: 568-10932-6-ND, 568-10932-2, 1727-1461-2, PBSS4130QAZ-ND, 1727-1461-1, 568-10932-6, 934067165147, PBSS4130QA, 568-10932-1-ND, 568-10932-2-ND, 568-10932-1, 1727-1461-6, PBSS4130QAZINACTIVE

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 930029-PBSS4130QAZ
Operating Temperature Range: 150°C (TJ)
Features: Bipolar (BJT) Transistor NPN 30 V 1 A 190MHz 325 mW Surface Mount DFN1010D-3
Package: 3-XDFN Exposed Pad
Package: Reel - TR
Mounting: Surface Mount
Family Name: PBSS4130
Categories: Discrete Semiconductor Products
Case / Package: DFN1010D-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 5000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Other Part Number: 568-10932-6-ND, 568-10932-2, 1727-1461-2, PBSS4130QAZ-ND, 1727-1461-1, 568-10932-6, 934067165147, PBSS4130QA, 568-10932-1-ND, 568-10932-2-ND, 568-10932-1, 1727-1461-6, PBSS4130QAZINACTIVE

Buy Now Datasheet
Single Bipolar Transistors - 1727-1461-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-1461-2-ND
Single Bipolar Transistors 1727-1461-2-ND
Bipolar (BJT) Transistor NPN 30V 1A 190MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor NPN 30V 1A 190MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4130QAZ
Bipolar Transistors - BJT PBSS4130QAZ
Bipolar Transistors - BJT 30 V, 1A NPN low VCE sat (BISS) transi

Bipolar Transistors - BJT 30 V, 1A NPN low VCE sat (BISS) transi

Buy Now Datasheet
Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 1 A, 180 Rohs Compliant Nexperia - 68Y7772 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 1 A, 180 Rohs Compliant Nexperia
68Y7772
Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 1 A, 180 Rohs Compliant Nexperia 68Y7772
Bipolar (BJT) Single Transistor, NPN, 30 V, 190 MHz, 325 mW, 1 A, 180 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 30 V, 190 MHz, 325 mW, 1 A, 180 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4130QAZ 930029-PBSS4130QAZ 1727-1461-2-ND PBSS4130QAZ 68Y7772
Product Name 30 V, 1 A NPN low VCEsat transistor TRANSISTORS - Transistors (BJT) - Single - PBSS4130QAZ Single Bipolar Transistors Bipolar Transistors - BJT Bipolar (Bjt) Single Transistor, Npn, 30 V, 190 Mhz, 325 Mw, 1 A, 180 Rohs Compliant Nexperia
Polarity NPN NPN NPN NPN
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