NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBSS5130QA-Q.
Features and benefits
Very Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain hFE at high IC
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirments
Solderable side pads
Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
PNP complement: PBSS5130QA-Q.
Features and benefits
- Very Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- High energy efficiency due to less heat generation
- Reduced Printed-Circuit Board (PCB) area requirments
- Solderable side pads
- Qualified according to AEC-Q101 and recommended for use in automotive applications
Applications
- Loadswitch
- Battery-driven devices
- Power management
- Charging circuits
- Power switches (e.g. motors, fans)
