Nexperia B.V. 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor PBSS4112PANP-QX

NPN/PNP low V_CEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4112PAN-Q

Features and benefits

• Very low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High collector current gain h_FE at high I_C
• Reduced Printed-Circuit Board (PCB) requirements
• High efficiency due to less heat generation
• Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)

PBSS4112PANP-Q/SOT1118/HUSON6

PBSS4112PANP-Q/SOT1118/HUSON6

PBSS4112PANP-Q/SOT1118/HUSON6

Bipolar Transistors - BJT SOT1118/HUSON6 NPN/PNP TRANS Product overview: PBSS4112PANP-QX from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-PBSS4112PANP-QX can be used for catalog matching and distributor lookup.