The NGW75T65M3DFP is a 650 V, 75 A trench field-stop IGBT with a fully rated silicon diode, housed in a TO-247-3 package. It operates at a maximum junction temperature of 175 °C and has a short-circuit withstand time of 5 μs. The device features low conduction and switching losses, and is optimized for high-frequency industrial inverters and servo motor drives. Its thermal resistance from junction to case is 0.24 to 0.28 K/W for the IGBT and 0.38 to 0.44 K/W for the diode. The part is HV-H3TRB qualified and supports parallel operation with stable parameters.
The NGW75T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | NGW75T65M3DFP/A00Q |
| Product Name | 650 V, 75 A trench field-stop IGBT with full rated silicon diode |
| Package Type | SOT429-5 SOT429-5 |
