Nexperia B.V. N-channel 100V, 1.3mΩ, Standard Level MOSFET in CCPAK1212 BUK7A1R3-100LJ

Description
Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding automotive environments. Trench 12 split-gate trench technology: Reduced cell pitch enables enhanced power density resulting in lower conduction losses. Fast and efficient switching with optimal damping for low spiking and improved switching efficiency. CCPAK mounting base Large cross-sectional area of exposed drain tab for excellent thermal dissipation and low steady state thermal resistance. CCPAK gull-wing leads: High Board Level Reliability (BLR), pins absorbing mechanical stress during thermal cycling. Visual (AOI) soldering inspection, no need for expensive x-ray equipment. CCPAK copper clip technology: Low transient thermal resistance and package inductance. High maximum current capability and improved current spreading on silicon die. Applications Light-electric / Electric vehicle applications 48V to 12V DC-DC Converters Synchronous rectifier for On-Board Charging (OBC) systems 48V Traction Inverters 48V Belt Starter Generator (BSG) Battery Management Systems
  • N-channel 100V, 1.3mΩ, Standard Level MOSFET in CCPAK1212 - BUK7A1R3-100LJ - Nexperia B.V.
    Nexperia B.V.
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Description
Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding automotive environments. Trench 12 split-gate trench technology: Reduced cell pitch enables enhanced power density resulting in lower conduction losses. Fast and efficient switching with optimal damping for low spiking and improved switching efficiency. CCPAK mounting base Large cross-sectional area of exposed drain tab for excellent thermal dissipation and low steady state thermal resistance. CCPAK gull-wing leads: High Board Level Reliability (BLR), pins absorbing mechanical stress during thermal cycling. Visual (AOI) soldering inspection, no need for expensive x-ray equipment. CCPAK copper clip technology: Low transient thermal resistance and package inductance. High maximum current capability and improved current spreading on silicon die. Applications Light-electric / Electric vehicle applications 48V to 12V DC-DC Converters Synchronous rectifier for On-Board Charging (OBC) systems 48V Traction Inverters 48V Belt Starter Generator (BSG) Battery Management Systems
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Datasheet
Datasheet Summary
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Automotive qualified N-channel MOSFET with a 100 V drain-source voltage rating and a typical on-state resistance of 1.02 mΩ at 25 °C, housed in a CCPAK1212 (SOT8000A) package measuring 12 mm × 12 mm × 2.5 mm. The device supports a maximum continuous drain current of 355 A and a total power dissipation of 935 W, with an operating junction temperature range of -55 °C to 175 °C. It features a copper clip design for low thermal resistance and high current capability, gull-wing leads for high board-level reliability, and is fully compliant with AEC-Q101 requirements. The package includes an exposed drain tab for enhanced thermal performance and is suited for high-power applications including electric vehicle systems, 48 V to 12 V DC-DC converters, and battery management systems.

Datasheet Summary
Powered by GS/AI

Automotive qualified N-channel MOSFET with a 100 V drain-source voltage rating and a typical on-state resistance of 1.02 mΩ at 25 °C, housed in a CCPAK1212 (SOT8000A) package measuring 12 mm × 12 mm × 2.5 mm. The device supports a maximum continuous drain current of 355 A and a total power dissipation of 935 W, with an operating junction temperature range of -55 °C to 175 °C. It features a copper clip design for low thermal resistance and high current capability, gull-wing leads for high board-level reliability, and is fully compliant with AEC-Q101 requirements. The package includes an exposed drain tab for enhanced thermal performance and is suited for high-power applications including electric vehicle systems, 48 V to 12 V DC-DC converters, and battery management systems.

Suppliers

Company
Product
Description
Supplier Links
N-channel 100V, 1.3mΩ, Standard Level MOSFET in CCPAK1212 - BUK7A1R3-100LJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 100V, 1.3mΩ, Standard Level MOSFET in CCPAK1212
BUK7A1R3-100LJ
N-channel 100V, 1.3mΩ, Standard Level MOSFET in CCPAK1212 BUK7A1R3-100LJ
Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to AEC-Q101: 175 °C rating suitable for thermally demanding automotive environments. Trench 12 split-gate trench technology: Reduced cell pitch enables enhanced power density resulting in lower conduction losses. Fast and efficient switching with optimal damping for low spiking and improved switching efficiency. CCPAK mounting base Large cross-sectional area of exposed drain tab for excellent thermal dissipation and low steady state thermal resistance. CCPAK gull-wing leads: High Board Level Reliability (BLR), pins absorbing mechanical stress during thermal cycling. Visual (AOI) soldering inspection, no need for expensive x-ray equipment. CCPAK copper clip technology: Low transient thermal resistance and package inductance. High maximum current capability and improved current spreading on silicon die. Applications Light-electric / Electric vehicle applications 48V to 12V DC-DC Converters Synchronous rectifier for On-Board Charging (OBC) systems 48V Traction Inverters 48V Belt Starter Generator (BSG) Battery Management Systems

Automotive qualified N-channel MOSFET using the latest Trench 12 low ohmic split-gate technology, for ultra-low RDS(on) capability, housed in a CCPAK1212 (SOT8000A) package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and reliability.

Features and benefits

Fully automotive qualified to AEC-Q101:

  • 175 °C rating suitable for thermally demanding automotive environments.

Trench 12 split-gate trench technology:

  • Reduced cell pitch enables enhanced power density resulting in lower conduction losses.
  • Fast and efficient switching with optimal damping for low spiking and improved switching efficiency.

CCPAK mounting base

  • Large cross-sectional area of exposed drain tab for excellent thermal dissipation and low steady state thermal resistance.

CCPAK gull-wing leads:

  • High Board Level Reliability (BLR), pins absorbing mechanical stress during thermal cycling.
  • Visual (AOI) soldering inspection, no need for expensive x-ray equipment.

CCPAK copper clip technology:

  • Low transient thermal resistance and package inductance.
  • High maximum current capability and improved current spreading on silicon die.

Applications

  • Light-electric / Electric vehicle applications
  • 48V to 12V DC-DC Converters
  • Synchronous rectifier for On-Board Charging (OBC) systems
  • 48V Traction Inverters
  • 48V Belt Starter Generator (BSG)
  • Battery Management Systems
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK7A1R3-100LJ
Product Name N-channel 100V, 1.3mΩ, Standard Level MOSFET in CCPAK1212
MOSFET Operating Mode Enhancement
V(BR)DSS 100 volts
IDSS 355000 milliamps
VGS(off) 20 volts
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