PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks, measuring 1.4 mm x 1.2 mm x 0.48 mm, with a maximum collector-emitter voltage of -65 V and a continuous collector current of -100 mA. It supports peak collector current of -200 mA for pulses up to 1 ms and has a maximum power dissipation of 360 mW on a standard FR4 PCB with 35 µm copper. The device features a DC current gain (hFE) range of 220 to 475, a transition frequency of 100 MHz, and a junction temperature range up to 150 °C. It is suitable for Automatic Optical Inspection and space-constrained applications.
PNP general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.
Table 1.Product overview
Type number
-
Package
-
NPN complement:
Nexperia
-
JEDEC
BC856AQC
SOT8009
MO-340CA
BC846AQC
BC856BQC
BC846BQC
Features and benefits
Applications
65 V, 100 mA PNP transistor
45 V, 100 mA PNP general-purpose transistors
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 360mW Surface Mount, Wettable Flank DFN1412D-3
Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 360mW Surface Mount, Wettable Flank DFN1412D-3
TRANS PNP 65V 0.1A DFN1412D-3
TRANSISTOR, PNP, 65V, 0.1A, DFN1412D-3 ROHS COMPLIANT: YES
| Nexperia B.V. | RS Components, Ltd. | Rochester Electronics | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Transistors | Bipolar RF Transistors | Transistors |
| Product Number | BC856BQCZ | 2401805P | BC856BQCZ | 1727-BC856BQCZCT-ND | BC856BQCZ | 08AK5131 |
| Product Name | 65 V, 100 mA PNP general-purpose transistors | Bipolar Transistors | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Transistor, Pnp, 65V, 0.1A, Dfn1412D-3 Rohs Compliant Nexperia | |
| Package Type | SOT8009 SOT8009 | SOT-8009 | SOT8009 | 3-XDFN Exposed Pad | DFN1412D-3 | TO-3 |
| IC(max) | -100 milliamps | 100 milliamps | ||||
| VCEO | -65 volts | 65 volts | ||||
| PD | 360 milliwatts | |||||
| hfe | 250 |
