Nexperia B.V. 80 V, 1 A NPN medium power transistors BC56-10PASX

Description
NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits High collector current capability IC and ICM Reduced Printed-Circuit Board (PCB) area requirements Exposed heat sink for excellent thermal and electrical conductivity Two current gain selections Leadless very small SMD plastic package with medium power capability Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified Applications Linear voltage regulators Battery driven devices MOSFET drivers High-side switches Power management Amplifiers
  • 80 V, 1 A NPN medium power transistors - BC56-10PASX - Nexperia B.V.
    Nexperia B.V.
  • Single Bipolar Transistors - 1727-BC56-10PASXTR-ND - DigiKey
    DigiKey
  • Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia - 98Y2117 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC56-10PASX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits High collector current capability IC and ICM Reduced Printed-Circuit Board (PCB) area requirements Exposed heat sink for excellent thermal and electrical conductivity Two current gain selections Leadless very small SMD plastic package with medium power capability Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified Applications Linear voltage regulators Battery driven devices MOSFET drivers High-side switches Power management Amplifiers
Request a Quote
Datasheet
Datasheet Summary
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NPN medium power transistor in an ultra thin DFN2020D-3 (SOT1061D) leadless SMD plastic package with exposed heat sink for enhanced thermal conductivity, rated for a collector-emitter voltage of 80 V and a continuous collector current of 1 A. The device has a peak collector current capability of 2 A, a maximum junction temperature of 150 °C, and is AEC-Q101 qualified. It features a DC current gain range of 63 to 160 at V_CE = 2 V and I_C = 150 mA. The package dimensions are 2 mm x 2 mm x 0.65 mm with a 1.3 mm pitch and side-wettable flanks suitable for AOI. Applications include voltage regulation, battery-powered devices, and power switching.

Datasheet Summary
Powered by GS/AI

NPN medium power transistor in an ultra thin DFN2020D-3 (SOT1061D) leadless SMD plastic package with exposed heat sink for enhanced thermal conductivity, rated for a collector-emitter voltage of 80 V and a continuous collector current of 1 A. The device has a peak collector current capability of 2 A, a maximum junction temperature of 150 °C, and is AEC-Q101 qualified. It features a DC current gain range of 63 to 160 at V_CE = 2 V and I_C = 150 mA. The package dimensions are 2 mm x 2 mm x 0.65 mm with a 1.3 mm pitch and side-wettable flanks suitable for AOI. Applications include voltage regulation, battery-powered devices, and power switching.

Suppliers

Company
Product
Description
Supplier Links
80 V, 1 A NPN medium power transistors - BC56-10PASX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
80 V, 1 A NPN medium power transistors
BC56-10PASX
80 V, 1 A NPN medium power transistors BC56-10PASX
NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. Features and benefits High collector current capability IC and ICM Reduced Printed-Circuit Board (PCB) area requirements Exposed heat sink for excellent thermal and electrical conductivity Two current gain selections Leadless very small SMD plastic package with medium power capability Suitable for Automatic Optical Inspection (AOI) of solder joint AEC-Q101 qualified Applications Linear voltage regulators Battery driven devices MOSFET drivers High-side switches Power management Amplifiers

NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.

Features and benefits

  • High collector current capability IC and ICM
  • Reduced Printed-Circuit Board (PCB) area requirements
  • Exposed heat sink for excellent thermal and electrical conductivity
  • Two current gain selections
  • Leadless very small SMD plastic package with medium power capability
  • Suitable for Automatic Optical Inspection (AOI) of solder joint
  • AEC-Q101 qualified

Applications

  • Linear voltage regulators
  • Battery driven devices
  • MOSFET drivers
  • High-side switches
  • Power management
  • Amplifiers
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-BC56-10PASXTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-BC56-10PASXTR-ND
Single Bipolar Transistors 1727-BC56-10PASXTR-ND
Bipolar (BJT) Transistor NPN 80V 1A 180MHz 420mW Surface Mount DFN2020D-3

Bipolar (BJT) Transistor NPN 80V 1A 180MHz 420mW Surface Mount DFN2020D-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC56-10PASX
Bipolar Transistors - BJT BC56-10PASX
Bipolar Transistors - BJT 45V/60V/80V 1A NPN medium power trans

Bipolar Transistors - BJT 45V/60V/80V 1A NPN medium power trans

Buy Now Datasheet
Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia - 98Y2117 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia
98Y2117
Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia 98Y2117
TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:420mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor CaseRoHS Compliant: Yes

TRANSISTOR, BIPOLAR, AEC-Q101, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:180MHz; Power Dissipation Pd:420mW; DC Collector Current:1A; DC Current Gain hFE:63hFE; Transistor CaseRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC56-10PASX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC56-10PASX
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC56-10PASX
TRANS NPN 80V 1A DFN2020D-3

TRANS NPN 80V 1A DFN2020D-3

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC56-10PASX 1727-BC56-10PASXTR-ND BC56-10PASX 98Y2117 BC56-10PASX
Product Name 80 V, 1 A NPN medium power transistors Single Bipolar Transistors Bipolar Transistors - BJT Transistor, Bipolar, Aec-Q101, Npn, 80V; Transistor Polarity Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT1061D SOT1061D 3-UDFN Exposed Pad TO-3 DFN2020D-3
Polarity NPN NPN
Transistor Grade / Operating Range Automotive
IC(max) 1000 milliamps 1000 milliamps
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