California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - UPA812T-T1 UPA812T-T1

Description
Manufacturer: CEL Win Source Part Number: 043457-UPA812T-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 7GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: CEL Win Source Part Number: 043457-UPA812T-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 7GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - UPA812T-T1 - 043457-UPA812T-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - UPA812T-T1
043457-UPA812T-T1
TRANSISTORS - RF Transistors (BJT) - UPA812T-T1 043457-UPA812T-T1
Manufacturer: CEL Win Source Part Number: 043457-UPA812T-T1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 12dB Frequency - Transition: 7GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.4dB @ 1GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-363 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 70 @ 7mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient

Manufacturer: CEL
Win Source Part Number: 043457-UPA812T-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB
Frequency - Transition: 7GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-363
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 70 @ 7mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 043457-UPA812T-T1
Product Name TRANSISTORS - RF Transistors (BJT) - UPA812T-T1
Polarity NPN; 2 NPN (Dual)
Package Type SOT3; SOT-363
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
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