California Eastern Laboratories - CEL Bipolar RF Transistors UPA801T-A

Dual NPN silicon bipolar transistor for RF applications, configured in an SOT-363 package, with a gain-bandwidth product of 1.0 GHz, a collector-emitter voltage rating of 12 V, and a collector current of 7 mA per transistor. It provides a noise figure of 1.2 dB and a gain of 10.0 dB at 3 V and 7 mA, and is rated for 100 mA maximum collector current. The device matches the NE856 die type.