California Eastern Laboratories - CEL Bipolar RF Transistors UPA800T-T1

Description
RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Surface Mount 6-SO
Request a Quote Datasheet
Description
RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Surface Mount 6-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - 51-UPA800T-T1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
51-UPA800T-T1TR-ND
Bipolar RF Transistors 51-UPA800T-T1TR-ND
RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Surface Mount 6-SO

RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Surface Mount 6-SO

Buy Now Datasheet
Bipolar RF Transistors - 51-UPA800T-T1CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
51-UPA800T-T1CT-ND
Bipolar RF Transistors 51-UPA800T-T1CT-ND
RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Surface Mount 6-SO

RF Transistor 2 NPN (Dual) 10V 35mA 8GHz 200mW Surface Mount 6-SO

Buy Now Datasheet
TRANSISTORS - RF Transistors (BJT) - UPA800T-T1 - 052962-UPA800T-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - UPA800T-T1
052962-UPA800T-T1
TRANSISTORS - RF Transistors (BJT) - UPA800T-T1 052962-UPA800T-T1
Manufacturer: CEL Win Source Part Number: 052962-UPA800T-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 8GHz Transistor Polarity: 2 NPN (Dual) Noise Figure (dB Typ @ f): 1.9dB to 3.2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 6-SO Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 80 @ 5mA, 3V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 052962-UPA800T-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 8GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1.9dB to 3.2dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 6-SO
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 80 @ 5mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics
Product Category Transistors Transistors
Product Number 51-UPA800T-T1TR-ND 052962-UPA800T-T1
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - UPA800T-T1
Polarity NPN NPN; 2 NPN (Dual)
Unlock Full Specs
to access all available technical data

Similar Products

1300A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K3 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
Specs
Transistor Type IGBT
View Details
Hard To Find - 2MBI800U4G-120 - 1123628-2MBI800U4G-120 - Win Source Electronics
Specs
Transistor Type IGBT
Package Type SOT3
View Details
2 suppliers
IGBT Transistors - AIHD15N60RATMA1 - VAST STOCK CO., LIMITED
Infineon Technologies AG
Specs
Transistor Type IGBT
View Details
2 suppliers