NEC Corporation UPA2718GR-E1-AT

Description
Power Field-Effect Transistor, P-Channel MOSFET
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Description
Power Field-Effect Transistor, P-Channel MOSFET
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Datasheet
Datasheet Summary
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The UPA2718GR-E1-AT is a P-channel power MOSFET in a Power SOP8 surface-mount package, designed for power management in notebook computers and Li-ion battery protection circuits. It has a drain-to-source voltage rating of -30 V, a continuous drain current rating of -13 A, and a maximum total power dissipation of 2 W when mounted on a ceramic substrate. The device features low on-state resistance with RDS(on) of 9.0 mΩ maximum at -10 V gate-source voltage and 14.5 mΩ maximum at -4.5 V, and a typical input capacitance of 2810 pF. It includes a built-in gate protection diode. The quality grade is Standard, intended for use in computers, communications equipment, and similar consumer or industrial applications.

Datasheet Summary
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The UPA2718GR-E1-AT is a P-channel power MOSFET in a Power SOP8 surface-mount package, designed for power management in notebook computers and Li-ion battery protection circuits. It has a drain-to-source voltage rating of -30 V, a continuous drain current rating of -13 A, and a maximum total power dissipation of 2 W when mounted on a ceramic substrate. The device features low on-state resistance with RDS(on) of 9.0 mΩ maximum at -10 V gate-source voltage and 14.5 mΩ maximum at -4.5 V, and a typical input capacitance of 2810 pF. It includes a built-in gate protection diode. The quality grade is Standard, intended for use in computers, communications equipment, and similar consumer or industrial applications.

Suppliers

Company
Product
Description
Supplier Links
 - UPA2718GR-E1-AT - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, P-Channel MOSFET

Power Field-Effect Transistor, P-Channel MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number UPA2718GR-E1-AT
Polarity P-Channel
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