NEC Corp. Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10 UPA1572BH

Description
Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10
Description
Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10

Suppliers

Company
Product
Description
Supplier Links
Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10 - 4095-UPA1572BH - Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10
4095-UPA1572BH
Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10 4095-UPA1572BH
Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10

Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10

Supplier's Site

Technical Specifications

  Utmel Electronic Limited
Product Category Transistors
Product Number 4095-UPA1572BH
Product Name Power Field-Effect Transistor, 2A I(D), 60V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIP-10
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die - QPD2120D - Qorvo
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers
Bipolar Transistors - 1689652 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT223; Sot-223
View Details