California Eastern Laboratories - CEL Bipolar RF Transistors NE85639-A

Description
RF Transistor NPN 12V 100mA 9GHz 200mW Surface Mount SOT-143
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Description
RF Transistor NPN 12V 100mA 9GHz 200mW Surface Mount SOT-143
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Datasheet
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NPN silicon RF bipolar transistor in SOT-143 package, with a maximum collector-emitter voltage of 12V, collector current of 100mA, transition frequency of 7 GHz, and power dissipation of 200 mW.

Datasheet Summary
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NPN silicon RF bipolar transistor in SOT-143 package, with a maximum collector-emitter voltage of 12V, collector current of 100mA, transition frequency of 7 GHz, and power dissipation of 200 mW.

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Bipolar RF Transistors - NE85639-A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE85639-A-ND
Bipolar RF Transistors NE85639-A-ND
RF Transistor NPN 12V 100mA 9GHz 200mW Surface Mount SOT-143

RF Transistor NPN 12V 100mA 9GHz 200mW Surface Mount SOT-143

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number NE85639-A-ND
Product Name Bipolar RF Transistors
Polarity NPN
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