California Eastern Laboratories - CEL Bipolar RF Transistors NE85633-T1B-R23-A

The NE85633-T1B-R23-A is an NPN silicon RF transistor designed for microwave low-noise amplification. It is packaged in a 3-pin Minimold with dimensions of 2.8 mm width, 2.0 mm length, and 1.1 mm height, and is supplied on 3 kpcs/reel with pin 3 (collector) facing the perforation side. The device has a collector-to-emitter voltage rating of 12 V, a collector current limit of 100 mA, and a total power dissipation of 200 mW. It achieves a typical noise figure of 1.1 dB and a power gain of 11 dB at 1 GHz with VCE = 10 V and IC = 7 mA, and has a gain-bandwidth product of 7 GHz. The hFE classification R23 corresponds to a current gain range of 50 to 100. The part meets RoHS compliance and is rated for junction temperatures up to 150 °C.