California Eastern Laboratories - CEL Bipolar RF Transistors NE85619-A

Description
RF Transistor NPN 12V 100mA 4.5GHz 100mW Surface Mount SOT-523
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Description
RF Transistor NPN 12V 100mA 4.5GHz 100mW Surface Mount SOT-523
Request a Quote
Datasheet
Datasheet Summary
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NPN silicon RF transistor in SOT-523 package with a transition frequency of 4.5 GHz, collector-emitter voltage of 12 V, collector current of 100 mA, power dissipation of 100 mW, noise figure of 1.2 dB at 2 GHz, and power gain of 12.5 dB at 2 GHz.

Datasheet Summary
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NPN silicon RF transistor in SOT-523 package with a transition frequency of 4.5 GHz, collector-emitter voltage of 12 V, collector current of 100 mA, power dissipation of 100 mW, noise figure of 1.2 dB at 2 GHz, and power gain of 12.5 dB at 2 GHz.

Suppliers

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Bipolar RF Transistors - NE85619-A-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE85619-A-ND
Bipolar RF Transistors NE85619-A-ND
RF Transistor NPN 12V 100mA 4.5GHz 100mW Surface Mount SOT-523

RF Transistor NPN 12V 100mA 4.5GHz 100mW Surface Mount SOT-523

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number NE85619-A-ND
Product Name Bipolar RF Transistors
Polarity NPN
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