NEC Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NE722S01-T1B NE722S01-T1B

Manufacturer: NEC
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1082002-NE722S01-T1B
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 5 V
Frequency: 4 GHz
Power Dissipation: 250 mW
Gain: 12 dB
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SO
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 125 °C
RoHS: Compliant
Max Power Dissipation: 250 mW
Continuous Drain Current (ID): 120 mA
Drain to Source Breakdown Voltage: 5 V
Gate to Source Voltage (Vgs): -5 V

MOSFETs C-X Band GaAs MESFET Product overview: NE722S01-T1B from NEC Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NE722S01-T1B can be used for catalog matching and distributor lookup.