California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE68719-T1 NE68719-T1

Description
Manufacturer: CEL Win Source Part Number: 1082926-NE68719-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 11GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (19) Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3V Typical Gain (hFE) (Min): 70 @ 20mA, 2V Maximum Power Dissipation: 90mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Description
Manufacturer: CEL Win Source Part Number: 1082926-NE68719-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 11GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (19) Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3V Typical Gain (hFE) (Min): 70 @ 20mA, 2V Maximum Power Dissipation: 90mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - NE68719-T1 - 1082926-NE68719-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE68719-T1
1082926-NE68719-T1
TRANSISTORS - RF Transistors (BJT) - NE68719-T1 1082926-NE68719-T1
Manufacturer: CEL Win Source Part Number: 1082926-NE68719-T1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 11GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.3dB to 2dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-SuperMiniMold (19) Maximum Current Collector: 30mA VCEO Maximum Collector-Emitter Breakdown Voltage: 3V Typical Gain (hFE) (Min): 70 @ 20mA, 2V Maximum Power Dissipation: 90mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082926-NE68719-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 11GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.3dB to 2dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-SuperMiniMold (19)
Maximum Current Collector: 30mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 3V
Typical Gain (hFE) (Min): 70 @ 20mA, 2V
Maximum Power Dissipation: 90mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1082926-NE68719-T1
Product Name TRANSISTORS - RF Transistors (BJT) - NE68719-T1
Polarity NPN; NPN
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