California Eastern Laboratories - CEL TRANSISTORS - RF Transistors (BJT) - NE68030-T1-A NE68030-T1-A

Description
Manufacturer: CEL Win Source Part Number: 1082916-NE68030-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.4dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 5mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: CEL Win Source Part Number: 1082916-NE68030-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.4dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 5mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - NE68030-T1-A - 1082916-NE68030-T1-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE68030-T1-A
1082916-NE68030-T1-A
TRANSISTORS - RF Transistors (BJT) - NE68030-T1-A 1082916-NE68030-T1-A
Manufacturer: CEL Win Source Part Number: 1082916-NE68030-T1-A Packaging: Reel - TR Mounting: SMD (SMT) Gain: 9.4dB Frequency - Transition: 10GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.9dB @ 2GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-323 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 10V Typical Gain (hFE) (Min): 50 @ 5mA, 3V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: CEL
Win Source Part Number: 1082916-NE68030-T1-A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 9.4dB
Frequency - Transition: 10GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-323
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 50 @ 5mA, 3V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - NE68030-ATR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
NE68030-ATR-ND
Bipolar RF Transistors NE68030-ATR-ND
RF Transistor NPN 10V 35mA 10GHz 150mW Surface Mount SOT-323

RF Transistor NPN 10V 35mA 10GHz 150mW Surface Mount SOT-323

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey
Product Category RF Transistors Transistors
Product Number 1082916-NE68030-T1-A NE68030-ATR-ND
Product Name TRANSISTORS - RF Transistors (BJT) - NE68030-T1-A Bipolar RF Transistors
Polarity NPN; NPN NPN
Package Type SOT3; SOT323; SOT-323 SOT323; SC-70, SOT-323
Packing Method Tape Reel; Reel - TR
TJ 150 C (302 F)
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KCB820 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 6000 MHz
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SB1165S - 906321-2SB1165S - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details