California Eastern Laboratories - CEL Bipolar RF Transistors NE67739-A

The NE67739 is an NPN epitaxial silicon transistor in a 4-pin mini mold package, designed for high-frequency RF applications. It has a collector-to-emitter voltage rating of 6 V, a maximum collector current of 50 mA, and a total power dissipation of 200 mW. The device features a gain-bandwidth product of 14.5 GHz, a reverse transfer capacitance of 0.3 to 0.5 pF, and a noise figure of 1.5 to 2.5 dB at 2 GHz. DC current gain (hFE) ranges from 75 to 150 at VCE = 3 V and IC = 20 mA. The transistor meets standard operating temperature ranges from -65°C to +150°C. The package dimensions are specified with a body size of 2.0 mm width, 1.5 mm height, and 2.8 mm length. It is intended for use in general RF amplification circuits, with no indication of automotive or safety-critical qualifications.