The NE6510179A is a GaAs HJ-FET in a plastic surface mount package designed for medium power mobile communications and fixed wireless applications up to 3.7 GHz. It delivers 32.5 dBm typical output power at 3.5 V and 35 dBm at 5.0 V, with 10 dB typical linear gain at 1.9 GHz and 58% typical power added efficiency. The device has a thermal resistance of 5°C/W and operates with a maximum channel temperature of 125°C. The package dimensions are 7.5 mm × 5.7 mm, with a maximum height of 2.1 mm. It is available in bulk packaging and meets RoHS compliance with lead-free terminals.
RF Mosfet HFET 3.5V 200mA 1.9GHz 10dB 32.5dBm 79A
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | NE6510179A-A-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 4-SMD, Flat Leads |
