California Eastern Laboratories - CEL Bipolar RF Transistors NE52418-A

The NE52418-A is a surface-mount NPN GaAs HBT low-noise amplifier designed for L/S-band mobile communications. It is housed in a 4-pin super mini-mold package measuring 2.1 mm × 2.0 mm × 0.9 mm, with emitter pins at terminals 1 and 3, base at 2, and collector at 4. The device offers a typical power gain of 16 dB and a noise figure of 1.0 dB at 2 GHz, with an OIP3 of +25 dBm. It operates with a collector-emitter voltage up to 5 V and a maximum collector current of 30 mA, while dissipating up to 150 mW. The part is RoHS compliant and meets AEC-Q200 qualifications. Soldering is recommended via infrared reflow at ≤230°C for ≤30 seconds.