The NE3515S02 is a nanoscale HJ-FET designed for X to Ku-band low-noise amplification in applications such as DBS LNB and VSAT systems. It is packaged in a Micro-X plastic (S02) case and operates with a drain-source voltage up to 3 V and a drain current up to 25 mA. At 12 GHz, it achieves a typical noise figure of 0.3 dB and an associated gain of 12.5 dB, with a 1 dB compression point of +14 dBm. The device meets maximum drain-source voltage of 4 V and gate-source voltage of -3 V, with a total power dissipation of 165 mW when mounted on a 1.08 cm² × 1.0 mm glass epoxy PCB. It is rated for channel temperatures up to +125 °C and storage temperatures from -65 °C to +125 °C. The part is supplied in 8 mm wide embossed tape and is marked with a "G" indicating RoHS compliance.
RF Mosfet HFET 2V 10mA 12GHz 12.5dB 14dBm S02
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | NE3515S02-A-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 4-SMD, Flat Leads |
