California Eastern Laboratories - CEL RF FETs, MOSFETs NE34018-A

The NE34018 is a gallium arsenide Hetero-Junction FET low noise amplifier in a miniature SOT-343 surface mount package, designed for 1-3 GHz applications such as GPS, PCS, and WLAN. It has a typical noise figure of 0.6 dB and associated gain of 15.0 dB at 2 GHz with VDS = 2 V and ID = 5 mA. The device supports drain currents up to 80 mA and has a maximum drain-to-source voltage of 4 V. It features a thermal resistance of 833 °C/W and total power dissipation limit of 150 mW. Tape and reel packaging is available. The part is not rated for life support applications.