California Eastern Laboratories - CEL Bipolar RF Transistors 2SC5508-A

NPN silicon RF transistor for low-noise, high-gain amplification in a flat-lead 4-pin thin-type super minimold (M04) package. It has a collector-to-emitter voltage rating of 3.3 V, a collector current limit of 35 mA, and a total power dissipation of 115 mW. The device exhibits a typical noise figure of 1.1 dB and a power gain of 16 dB at 2 GHz under specified bias conditions. The gain-bandwidth product is 25 GHz, and the maximum available power gain is 19 dB at 2 GHz. It is rated for a maximum junction temperature of 150 °C and a storage temperature range of -65 to +150 °C.