California Eastern Laboratories - CEL Bipolar RF Transistors 2SC5338-AZ

NPN silicon RF transistor for high-frequency low distortion amplifier, housed in a 4-pin power minimold package, with a collector-to-emitter voltage rating of 12 V, collector current of 150 mA, and total power dissipation of 1.8 W. It provides a typical insertion power gain of 10 dB at 1 GHz, a gain-bandwidth product of 6.0 GHz, and low intermodulation distortion of -55 dB for IM2 and -76 dB for IM3 at 50 mA and 5 V. DC current gain ranges from 50 to 250, and reverse transfer capacitance is 1.0 to 2.0 pF at 1 MHz.