California Eastern Laboratories - CEL Bipolar RF Transistors 2SC5337-AZ

NPN silicon RF transistor for high-frequency low-distortion amplifiers in a 4-pin power minimold package measuring 4.5 mm × 2.1 mm. It has a collector-to-emitter voltage rating of 15 V, a collector current of 250 mA, and a total power dissipation of 2.0 W. Typical noise figure is 1.5 dB at 500 MHz and 2.0 dB at 1 GHz, with a current gain (hFE) range of 60 to 200. Second-order intermodulation distortion is 59.0 dB typical and third-order is 82.0 dB typical at 50 mA collector current. The device is packaged in a magazine case for the -AZ variant.