California Eastern Laboratories - CEL Bipolar RF Transistors 2SC5015-A

The NE685 series are surface mount NPN silicon high-frequency transistors designed for low voltage, low current, and low noise applications. The NE68518 variant, which corresponds to the 2SC5015 device, features a 12 GHz gain bandwidth product, a minimum noise figure of 1.5 dB at 2.0 GHz, and a collector current rating of 30 mA. It is packaged in an SOT-343 case measuring 2.0 mm × 1.3 mm, with a total power dissipation of 150 mW and thermal resistance of 833 °C/W. The device operates with a maximum collector-to-base voltage of 9 V and collector-to-emitter voltage of 6 V. The part is RoHS compliant and meets EIAJ standards.