California Eastern Laboratories - CEL Bipolar RF Transistors 2SC3583-A

NPN silicon RF transistor for high-frequency applications with a gain-bandwidth product of 9 GHz and a noise figure of 1.2 dB at 1 GHz and 1.6 dB at 2 GHz. It is housed in an SOT-23-3 package and has a collector-to-emitter voltage rating of 10 V, a collector current rating of 65 mA, and a total power dissipation of 200 mW. The device meets RoHS standards and is designed for surface-mount applications with a maximum junction temperature of 200°C and a thermal resistance of 625 °C/W. The part number 2SC3583 corresponds to the NE68133 variant in the series.