California Eastern Laboratories - CEL Bipolar RF Transistors 2SC3356-A

NPN silicon RF transistor for microwave low-noise amplification in a 3-pin Minimold package, measuring 2.8 mm x 2.0 mm x 1.5 mm. It has a collector-to-emitter voltage rating of 12 V, a maximum collector current of 100 mA, and a total power dissipation of 200 mW. Typical noise figure is 1.1 dB and power gain is 11 dB at 1 GHz with VCE = 10 V and IC = 7 mA. The gain-bandwidth product is 7 GHz. It meets RoHS standards and is rated for junction temperatures up to 150 °C. The part is surface-mountable and designed for high-frequency applications with low noise performance.